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Download hemt for free11/7/2023 A full TCAD to SPICE flow, in an integrated DTCO environment, delivers clear actionable results for circuit design optimization.TCAD is part of a DTCO flow which improves designs across multiple domains – Layout, Process, Device, SPICE, and RC extraction.In TCAD the engineer can “see inside” the device and identify what region within the semiconductor first succumbs to breakdown due to high impact ionization generation A TCAD simulation can also replicate the reverse current-voltage curve, but also can also tell you why the device is experiencing breakdown.The device experiences reverse breakdown at a specific voltage Reverse voltage characterization on a power device tells you what happens at high reverse biases.Experimental measurements tell you what happens, but not why it happens. Using simulation, you can see ‘inside” the device.ITRS roadmaps indicates that TCAD simulation can reduce the costs during development cycles by ~30%.Reduce the time and manufacturing cycles spent to develop semiconductor technologies. Finally, the numerical predictions from our model are compared with the published experimental results and found to be in close agreement. The current collapse that occurs more in the top channel nearer to the gate, is subsidized by the current in bottom channel, hence minimizing overall current collapse in the device. The presence of double channels in the device minimize the current collapse problems, is accurately explained in our proposed model. Trapping/detrapping surface states are also considered to determine device drive current and trans-conductance expressions. An aluminum mole fraction graded doping profile in bottom barrier layer has been used for bottom channel sheet carrier density. The model analyses sheet charge density and finaly current density in each of the top and bottom channels using effective device threshold expressions based on spontaneous and piezoelectric polarization dependent two dimensional electron gas (2-DEG). In this paper we present 2-D analytical model for I-V characteristics and transconductance of dual channel AlGaN/GaN Modulation Doped Field Effect Transistor (DC-MODFET) to demonstrate the current-voltage as well as transfer characteristics of the device structure under different bias conditions.
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